PURPOSE: To allow a thin metallic film excellent in adhesive strength to adhere to a plastic film, by subjecting a plastic film to low-temp. plasma treatment of inert gas, forming a thin metallic film on the above by a physical vapor deposition method, and successively exposing the above film to a gaseous atmosphere having limited oxygen content.
CONSTITUTION: A plastic film 11 is set in a vacuum tank 1 and the inside of the tank is evacuated. Ar is introduced from an exhaust nozzle 13 to regulate gas pressure to about 3.0×10-3Torr and an A.C. voltage of about 1000V is applied to an electrode 12 to produce plasma, and then, plasma treatment is carried out while controlling the winding speed of the film 11. Subsequently, the inside of the tank 1 is evacuated and O2 gas is introduced until a pressure of about 1.0Torr is reached, and then, while being rewound, the film 11 is brought into contact with the atmosphere containing ≥1% O2. The inside of the vacuum tank 1 is evacuated again and Ar is introduced, and, in a sputter chamber 2 equipped with a cathode to which a Cu target 8 is attached and an anode 10, a thin Cu film is formed on the film 11 by sputtering. By this method, the thin metallic film excellent in adhesive strength can be allowed to adhere to the plastic film 11.
KUMAZAWA KINYA
YAMANAKA NOBUMITSU
