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Title:
METHOD FOR ANALYZING IMPURITY PROFILE
Document Type and Number:
Japanese Patent JP2002303595
Kind Code:
A
Abstract:

To provide a method for analyzing impurity profiles to easily perform secondary ion mass spectrometry with high resolution in the depth direction.

This method is a method for analyzing impurity profiles using secondary ion mass spectrometry, and comprises a process to prepare an SOI base plate comprising a top silicon layer 1, a BOX oxide film 7 and a support base plate 8, a process to perform semiconductor production process on the layer 1, a process to paste a glass substrate 11 on the surface of the layer 1, a process to remove the plate 8 from the SOI base plate by mechanical polishing, a process to remove the layer 7 from the SOI base plate by etching with hydrofluoric acid for exposing the top silicon layer, and a process to analyze the top silicon layer from the rear face direction using secondary ion mass spectrometry.


Inventors:
Asakawa, Tsutomu
Application Number:
JP2001000104612
Publication Date:
October 18, 2002
Filing Date:
April 03, 2001
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
G01N23/225; G01N1/28; H01L21/66; (IPC1-7): G01N23/225; G01N1/28; H01L21/66
Attorney, Agent or Firm:
上柳 雅誉 (外1名)



 
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