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Title:
METHOD AND APPARATUS FOR ADJUSTING PROPERTY OF SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JP2009145063
Kind Code:
A
Abstract:

To provide a method and an apparatus for adjusting properties of a semiconductor pressure sensor, the method and apparatus for properly adjusting the properties by reducing the effect of the physical stress on a gauge sensor when adjusting the properties of the semiconductor pressure sensor for use in measuring relative or absolute pressure.

In the method for adjusting properties of a semiconductor pressure sensor, a fixture 26a includes a recess for storing a resin case part of an assembled resin cell 10 with a lead terminal integrally assembled. While the resin case part is placed in the recess, a probe 25a for inputting and outputting electrical signals is brought into contact with the lead terminal 7. A movable fixture 22 includes a seal material 23 for sealing a space between one main surface and the other surface of the sensor chip, and a pressure control hole for applying any pressure. A pressure reference chamber is formed by joining the movable fixture 22 to the fixture 26a and introducing required pressure through the pressure control hole, and thereby the properties are adjusted.


Inventors:
KURIMATA SHOJIRO
SAITO KAZUNORI
SHINODA SHIGERU
Application Number:
JP2007319624A
Publication Date:
July 02, 2009
Filing Date:
December 11, 2007
Export Citation:
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Assignee:
FUJI ELEC DEVICE TECH CO LTD
International Classes:
G01L27/00
Domestic Patent References:
JP2006078379A2006-03-23
JP2002286566A2002-10-03
JP2001242034A2001-09-07
JP2006078379A2006-03-23
Attorney, Agent or Firm:
Yoichi Matsumoto



 
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