PURPOSE: To facilitate etching with high speed, precision and low damage by a method wherein a resistant element is provided in parallel with a DC source and the impedance of a whole DC circuit is reduced and a self-bias voltage created by the application of a radio frequency power is controlled by selecting the proper resistance value of the resistance element.
CONSTITUTION: High density plasma is generated by a microwave and a negative bias voltage to a substrate 5 is induced by a radio frequency power regardless of whether the substrate 5 is made of insulating material or of non- insulating material. A DC power is applied to a sample table 6 with the radio frequency power and, by connecting a resistance element 17 in parallel with a DC source 8, the applied value of the DC power can be controlled so that the negative bias voltage can be controlled while the applied value of the radio frequency power is kept constant. When the substrate 5 is etched, the applied value of the DC source is so predetermined as to make the negative bias voltage applied to the substrate 5 high. With this constitution, increased ion energy and orientation to the substrate 5 can be given to gas ions and etching with high speed and improved precision can be realized.
NAKAZATO NORIO
KAKEHI YUTAKA
NAWATA MAKOTO
KAWAHARA HIRONORI
ITO ATSUSHI
KAWASAKI YOSHINAO
| JPS57164986A | 1982-10-09 | |||
| JPS52127770A | 1977-10-26 |