Title:
METHOD AND APPARATUS FOR FILLING AND FLATTENING CONTACT, VIA AND TRENCH OF SEMICONDUCTOR WAFER WITH LOW THERMAL COST METAL
Document Type and Number:
Japanese Patent JP3193875
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To fill up narrow high-aspect ratio apertures to form electric contacts, without forming voids in a final deposit by comprising an aperture lining composed of a carrier layer and sputter conductor to be reflowed to fill the apertures.
SOLUTION: Prior to deposition of a conductor, a carrier layer 100 is formed on the walls of apertures 113 of a high aspect ratio exceeding 1:1, the flow or moving of a depositing material for filling the apertures 113 is raised to deposit a conductor esp. Al in the apertures 113 of a thin film layer or substrate. Thus, if using the carrier layer 100, contacts 118, vias, etc., can be formed by depositing an aperture filling material by the conventional sputtering techonology and flowing it into the apertures 113 having an aspect ratio over 1:1.
Inventors:
Zensu
John Forster
Tse-Yang Yau
John Forster
Tse-Yang Yau
Application Number:
JP20863696A
Publication Date:
July 30, 2001
Filing Date:
August 07, 1996
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C14/00; C23C14/04; C23C14/06; C23C14/14; C23C14/32; C23C14/34; C23C14/35; C23C14/56; H01L21/203; H01L21/285; H01L21/3205; H01L21/768; H01L23/485; H01L23/52; H01L23/522; H01L23/532; (IPC1-7): H01L21/768; H01L21/203; H01L21/285
Domestic Patent References:
| JP6330309A | ||||
| JP3255624A | ||||
| JP722415A | ||||
| JP7193025A |
Other References:
【文献】米国特許5178739(US,A)
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)
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