PURPOSE: To uniformly and efficiently form a thin film having high quality by passing a conveying frame mounted with an endless annular flexible substrate on rotating rollers through a preheating chamber, film forming chamber and cooling chamber, supplying a gaseous raw material in the film forming chamber and forming the film on the flexible substrate under rotation by making use of a glow discharge.
CONSTITUTION: The conveying frame 15 wound with the endless annular flexible substrate 14 such as thin Ni strip on the rotating rollers 16 is successively passed in the preheating chamber 2, the film forming chamber 3 and the cooling chamber 4. After the substrate 14 is preheated to 150W300°C by a heater 7 in the preheating chamber, the substrate is sent into the film forming chamber 3. While the annular substrate 14 is rotated by rotating the rollers 16 with driving gears 20, a valve 11 is opened to supply gaseous silane into the film forming chamber 3. At the same time, a high-frequency voltage is impressed from a power source 10 to an electrode 9 to generate the plasma of the gaseous silane by the glow discharge. The thin amorphous Si film is thus formed on the rotating substrate 14. The substrate is cooled in succession thereof in the cooling chamber 4 and is taken out. The film is thus formed efficiently shorter time than that of conventional practice.
| JP6793828 | Heater base and processing equipment |
| JPH10147865 | SUBSTRATE HOLDER |
| JP2014231633 | SUBSTRATE HOLDER |
NAKAGAMA SHOJI
FUJITA NOBUHIKO
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