PURPOSE: To enable high-precision analysis of metal impurities in a semiconductor substrate in the non-contact and non-destructive manner, by controlling the temperature of a semiconductor substrate so as to be changed at a previously set change rate, and obtaining the correlation characteristics of recombination life corresponding with the temperature of the semiconductor substrate.

CONSTITUTION: An apparatus for impurity analysis is provided with an analyzing part 1, a microwave oscillator 2, a specimen stand 3 for mounting a semiconductor substrate 4, and a temperature control part 5 for controlling the temperature rise of the semiconductor substrate 4 at a constant change rate which is arbitrarily set. When the temperature of the semiconductor substrate 4 is raised at the set change rate by the temperature control part 5, and reaches a specified measurement temperature, the semiconductor substrate 4 is irradiated with a microwave signal M from the microwave oscillator 2, and at the same time irradiated with a pulse light L from a light generator 11. The electron-hole recombination life in the semiconductor substrate 4 is continuously measured as far as the temperature upper limit value with an oscilloscope 15. Thereby the correlative characteristics of recombination life can be obtained.