Title:
METHOD AND APPARATUS FOR JOINING TWO OBJECTS TO BE JOINED
Document Type and Number:
Japanese Patent JP2007281203
Kind Code:
A
Abstract:
To attain a higher joining intensity irrespective of material quality of joining surfaces when joining two objects to be joined.
Sputter-etching is conducted by radiating ion beams or atomic beams 8, 9 to the joining surfaces of both objects to be joined, for example, wafers W1, W2 in the vacuum condition under the room temperature. Simultaneously, a thin film is formed to the joining surface of at least one wafer W1 by sputtering a film forming material 7 with the ion beam or atomic beam. Thereafter, the joining surfaces are stacked with each other.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
MAEKAWA YUKIHIRO
AZUMA KAZUJI
AZUMA KAZUJI
Application Number:
JP2006105756A
Publication Date:
October 25, 2007
Filing Date:
April 07, 2006
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/02
Domestic Patent References:
| JP2004337927A | 2004-12-02 | |||
| JPH1092702A | 1998-04-10 |
Attorney, Agent or Firm:
Takao Itagaki
Yoshihiro Morimoto
Toshiji Sasahara
Yohei Harada
Yoshihiro Morimoto
Toshiji Sasahara
Yohei Harada