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Title:
METHOD AND APPARATUS FOR PROCESSING SUBSTRATE
Document Type and Number:
Japanese Patent JP2008034824
Kind Code:
A
Abstract:

To provide a substrate processing method which can suppress the occurrence of line width variations among substrates after a coating is sintered, and to provide a substrate processing apparatus used for the method.

A wafer W having a resist film 150 formed thereon is held at a temperature at which the resist film 150 is not sintered, so that components 151 of the resist film 150 are localized. After that, the resist film 150 is sintered.


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Inventors:
OTSUKA TAKAHISA
SHIBATA TAKESHI
Application Number:
JP2007163469A
Publication Date:
February 14, 2008
Filing Date:
June 21, 2007
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/027; G03F7/38
Domestic Patent References:
JP2005150696A2005-06-09
JPH0915572A1997-01-17
JP2003338499A2003-11-28
Attorney, Agent or Firm:
Hiroshi Takayama



 
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