Title:
METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL BY LIGHT-HIGH FREQUENCY INDUCTION HEATING
Document Type and Number:
Japanese Patent JPS6246990
Kind Code:
A
Abstract:
PURPOSE:To grow a single crystal having a large diameter and high quality by further subjecting the part to be heated between a raw material bar and crystal bar melted by optical heating with IR lamps to high-frequency induction heating so that even a high melting insulating material such as oxide is melted by heating. CONSTITUTION:The IR rays irradiated from the IR lamps 15, 16 disposed at the 1st and 2nd focuses F1, F2 of rotating ellipsoidal mirrors 13, 14 are reflected by the mirrors 13, 14 and are condensed to the part 17 to be heated disposed at the focus F0, by which said part is optically heated. The bottom end of the raw material bar 19 and the top end of the crystal bar 21 are brought into smooth contact with each other while both ends are heated and melted by the radiation energy of such optical heating, by which a melt zone, i.e., the part 17 to be heated is formed between the raw material bar 19 and the crystal bar 21. The part 17 is further subjected to the high-frequency induction heating by a high-frequency coil 22 to form the melt zone of a large capacity. The bar 19 and the bar 21 are lowered in a vertical direction while the bars are kept rotated in this state, by which the large-diameter single crystal is grown.
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Inventors:
NISHIMURA HIROSHI
Application Number:
JP18799985A
Publication Date:
February 28, 1987
Filing Date:
August 26, 1985
Export Citation:
Assignee:
NICHIDEN MACH LTD
International Classes:
C30B13/16; C30B13/20; C30B13/24; (IPC1-7): C30B13/16
Attorney, Agent or Firm:
Shogo Ehara