To obtain high surface temperature uniformity by executing an energy conservation to treat a substrate such as, for example, to heat-treat the substrate using a heat radiating lamp.

An apparatus for treatment comprises a rotating mechanism for rotating a wafer around a vertical axis in a generally cylindrical treating container, a mounting base having an elevation mechanism for vertically moving the wafer by utilizing a repulsion force of a permanent magnet and an electromagnet, and the heat radiating lamp provided oppositely to the base. The wafer is passed between the base and the lamp, and delivered to the base by a conveying arm introduced from its side into the container. The wafer is heat treated by filling a treating gas atmosphere in the container, rotating the base, energizing the electromagnet to raise the base, and approaching the wafer to the lamp. After heating of a prescribed time is finished, the base is lowered to the original position.