Title:
METHOD OF BUILDING UP OXIDE ON ION-IMPLANTED POLYCRYSTALLINE SILICON SURFACE
Document Type and Number:
Japanese Patent JPS6472531
Kind Code:
A
Abstract:
PURPOSE: To grow a high-quality oxide on an ion-implanted polysilicon surface by forming an Si film on a substrate, implanting ions therein, activating them to convert the Si film into a polysilicon, growing an insulation layer thereon, implanting second ions through it, removing the insulation layer and growing a second insulation layer. CONSTITUTION: On a substrate 10 an Si film 12 is formed through e.g. an oxide layer 11 and doped with a first dopant, e.g. P which is activated to convert the Si film 12 into a polysilicon 14, a first insulation layer 13 is grown on the polysilicon film 14, this frequency 14 is doped with a second dopant e.g. Ar through the first layer 13, the first layer 13 is removed, and a second insulation layer 15 is grown on the polysilicon film 14 so as to have uniform physical and electrical properties.
Inventors:
HIMANSHIYU CHIYOKUSHI
DANIERU TAN
DANIERU TAN
Application Number:
JP17932188A
Publication Date:
March 17, 1989
Filing Date:
July 20, 1988
Export Citation:
Assignee:
INTEL CORP
International Classes:
H01L21/316; H01L21/321; H01L21/3215; H01L21/265; H01L21/768; (IPC1-7): H01L21/265; H01L21/316; H01L21/90
Attorney, Agent or Firm:
Masaki Yamakawa (2 outside)