To provide a method for calculating a resist pattern using a computer to improve calculation accuracy of the resist pattern.
A method for calculating a resist pattern comprises the steps of: (1) calculating optical intensity distribution of an optical image formed in a resist based on a reticle pattern and an exposing condition; (2) performing convolution integration of the optical intensity distribution calculated at Step 1, using a first diffusion length; (3) based on the optical intensity distribution calculated at Step 1 or the optical intensity distribution subjected to the convolution integration at Step 2, for each point in a surface of the resist, calculating representative light intensity representing light intensity in a region having a predetermined size including the point; (4) correcting the optical intensity distribution subjected to the convolution integration at Step 2 by adding a correction function to the optical intensity distribution subjected to the convolution integration at Step 2; and (5) calculating the resit pattern based on the optical intensity distribution corrected at Step 4 and a preset slice level.
TSUJITA KOICHIRO
MIKAMI KOJI
ISHII HIROYUKI
JP2007108508A | 2007-04-26 | |||
JP2000029217A | 2000-01-28 | |||
JPH08148404A | 1996-06-07 | |||
JP2004228228A | 2004-08-12 |
WO2004107047A1 | 2004-12-09 |
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
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