Title:
METHOD FOR CALIBRATING TEMPERATURE OF EPITAXY REACTOR
Document Type and Number:
Japanese Patent JPH09232241
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for simply calibrating the temperature of an epitaxy reactor with high reliability. SOLUTION: The method for calibrating the temperature of an epitaxy reactor comprises the steps of preparing a reference wafer 10 in a single crystal silicon by implanting at least the surface of one single crystal silicon of doping to be later activated and annealed to form a diffused layer 22, then measuring the area resistance of the layer 22 at the certain point of the surface of the wafer, placing the wafer 10 in the reactor when the reactor is set at a desired temperature and has neutral gas flowing therein, then again measuring the resistance at the same point, and calculating the difference between the two values of the resistances, and converting the difference to a thermal cycle received by the wafer disposed in the reactor.
Inventors:
DEIDEIE DEYUTARUTORU
Application Number:
JP2829197A
Publication Date:
September 05, 1997
Filing Date:
January 29, 1997
Export Citation:
Assignee:
SGS THOMSON MICROELECTRONICS
International Classes:
G01K15/00; C23C16/46; C30B25/10; H01L21/205; H01L21/26; H01L21/265; H01L21/66; (IPC1-7): H01L21/205; G01K15/00; H01L21/26; H01L21/265; H01L21/66
Attorney, Agent or Firm:
Keiichi Yamamoto