Title:
METHOD FOR CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2018186231
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for cleaning and drying which suppresses falling down or collapse of a pattern generated when a cleaning liquid is dried after a semiconductor substrate is cleaned, and can efficiently remove the cleaning liquid.SOLUTION: A method for cleaning and drying a semiconductor substrate includes: cleaning a semiconductor substrate 1 on which a pattern is formed with a cleaning liquid 3; replacing the cleaning liquid 3 remained on the semiconductor substrate 1 using a composition solution containing a resin containing a repeating unit represented by the following general formula (1) and a solvent; heating and removing the solvent at a temperature lower than a decomposition temperature of the resin; spraying gas at a temperature equal to or higher than the decomposition temperature while keeping the temperature of the semiconductor substrate 1 at 0°C or higher and lower than the decomposition temperature; and decomposing and removing the resin from a surface 8 side in contact with gas.SELECTED DRAWING: Figure 1
Inventors:
OGIWARA TSUTOMU
WATANABE OSAMU
NAGATA TAKESHI
KOBAYASHI NAOKI
KOORI DAISUKE
WATANABE OSAMU
NAGATA TAKESHI
KOBAYASHI NAOKI
KOORI DAISUKE
Application Number:
JP2017088548A
Publication Date:
November 22, 2018
Filing Date:
April 27, 2017
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
H01L21/304; C11D7/26; C11D7/50; F26B5/00; F26B9/00
Domestic Patent References:
| JP2015162486A | 2015-09-07 | |||
| JP2015149384A | 2015-08-20 | |||
| JP2014011426A | 2014-01-20 |
Foreign References:
| US20160086829A1 | 2016-03-24 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi