METHOD OF CLEANING SURFACE OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND ETCHING SOLUTION

Title:

METHOD OF CLEANING SURFACE OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND ETCHING SOLUTION

Document Type and Number:

Japanese Patent JPH0834700

Kind Code:

A

Abstract:

PURPOSE: To provide a method of cleaning a surface of a semiconductor single crystal of group II-VI compd. in the periodic table capable of causing no deterioration of smoothness of the surface of the single crystal before and after etching, having excellent cleanliness of a mirror surface and suitable for epitaxial growth, etc.

CONSTITUTION: The semiconductor single crystal of group II-VI compd. in the periodic table is subjected to etching with a mixture soln. of potassium permanganate, sulfuric acid and water, then subjected to ultrasonic washing in dichloromethane or trichloroethylene, or subjected to heat treatment at higher than 200°C, or subjected to immersion treatment with carbon disulfide at ordinary temp..

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Inventors:

YAMADA TAKASHI

Application Number:

JP19274894A

Publication Date:

February 06, 1996

Filing Date:

July 26, 1994

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES

International Classes:

C30B29/48; C30B33/10; H01L21/304; H01L21/308; (IPC1-7): C30B33/10; H01L21/304; H01L21/308

Attorney, Agent or Firm:

Akira Uchida (2 outside)

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