Title:
METHOD OF COATING REFLECTION PREVENTIVE FILM ON SILICON
Document Type and Number:
Japanese Patent JPS5660075
Kind Code:
A
Abstract:
The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound by partial hydrolysis and polymerization. The solution is applied to the surface of a silicon chip. The chip is then heated which converts the solution to a solid oxide coating which meets the antireflective optical film requirements and induces the migration of the dopants into the chip, forming a PN junction in the chip. The method also provides deep and uniform junction formation or diffusion without resulting in excessive carrier concentration.
Inventors:
BARENTO AATORATSUKU YORUDASU
RUBOMAIRA ANNA YORUDASU
RUBOMAIRA ANNA YORUDASU
Application Number:
JP11117080A
Publication Date:
May 23, 1981
Filing Date:
August 14, 1980
Export Citation:
Assignee:
WESTINGHOUSE ELECTRIC CORP
International Classes:
C09D5/00; H01L21/225; H01L31/0216; H01L31/04; (IPC1-7): C09D1/00; C09D5/00; H01L31/04; H01L31/18
Domestic Patent References:
| JPS5482992A | 1979-07-02 |