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Title:
METHOD FOR CONTINUOUSLY REFINING POLYCRYSTALLINE SILICON AND ZINC REDUCTION REACTOR
Document Type and Number:
Japanese Patent JP2011195392
Kind Code:
A
Abstract:

To provide a method for continuously refining polycrystalline silicon by which, when the polycrystalline silicon is produced by reducing silicon tetrachloride by a zinc reduction method, reduction is continuously performed and generation of un-reacted silicon tetrachloride and zinc are suppressed to heighten generation efficiency of the polycrystalline silicon and un-reacted zinc and silicon tetrachloride and zinc chloride to be a reaction by-product are efficiently recovered and reused.

The method for continuously refining the polycrystalline silicon by the zinc reduction method includes a step of reducing refined silicon tetrachloride by continuously bringing refined silicon tetrachloride and zinc into contact with each other to continuously produce highly refined polycrystalline silicon and zinc chloride, a wet reaction step of adding water to the produced zinc chloride to produce a zinc chloride aqueous solution having regulated zinc concentration, an electrolysis step of electrolyzing the zinc chloride aqueous solution and separating zinc and chlorine, a step of recovering un-reacted refined silicon tetrachloride and zinc in the step and a step of recycling zinc, chlorine and silicon tetrachloride recovered by the step.


Inventors:
USHIO RYOZO
MAEBA KAZUYA
TAN TOSHIRO
ISHIDA HITOSHI
Application Number:
JP2010065018A
Publication Date:
October 06, 2011
Filing Date:
March 19, 2010
Export Citation:
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Assignee:
SUMITOMO METAL MINING CO
International Classes:
C01B33/037; C25B1/26; C22B19/20
Attorney, Agent or Firm:
Yoshitaka Oshida