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Title:
METHOD FOR CONTROLLING AND/OR CORRECTING RTP LOW TEMPERATURE OPERATION BY USING REFRACTORY METAL SILICIDATION PHASE TRANSITION TEMPERATURE POINT
Document Type and Number:
Japanese Patent JP2003022981
Kind Code:
A
Abstract:

To provide a method for exactly controlling a temperature in rapid thermal process(RTP) low temperature operation in the production process of a semiconductor substrate.

In an RTP system, at least one wafer provided with a silicon semiconductor substrate having a refractory metal layer thereon is silicided at each of different temperatures. Uniformity in the sheet resistance of the wafer is measured so that a silicidation phase transition temperature point can be detected at a highest uniformity point. This temperature point is used for correcting or resetting the RTP system. Uniformity in the sheet resistance of each of wafers is measured so that the silicidation phase transition temperature point can be detected in uniformity in the highest sheet resistance in each of RTP systems. This temperature point is used for matching the temperatures of the respective RTP systems.


Inventors:
Zhu, Zhong-yun
Jaiswal, Rajneesh
Abd, Karim Haznita
Zhang, Bei Chao
Cham, Johnny
Yelamanchi, Ravi Sankar
Leong, Chee Kong
Application Number:
JP2002000154079
Publication Date:
January 24, 2003
Filing Date:
May 28, 2002
Export Citation:
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Assignee:
CHARTERED SEMICONDUCTOR MFG LTD
LUCENT TECHNOLOGIES INC
International Classes:
H01L21/26; G01K15/00; (IPC1-7): H01L21/26
Attorney, Agent or Firm:
社本 一夫 (外5名)



 
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