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Title:
METHOD FOR CONTROLLING PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2014179576
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for controlling a plasma processing device which eliminates the need of prior investigation of a resonance point while maintaining low contamination and high uniformity even in a multi-step etching.SOLUTION: A method for controlling plasma processing device including a step of adjusting high-frequency bias current flowing to an opposed antenna electrode includes the steps of: setting reactance of a variable element to an initial value (S2); detecting bias current flowing to the opposed antenna electrode (S4); searching for the maximum value of the detected current (S5, S6); and moving the reactance value of the variable element to the value set from the maximum value and fixing the reactance value (S7, S8).

Inventors:
MORI MASASHI
HIRATA AKIRA
YAMAMOTO KOICHI
ARASE TAKAO
Application Number:
JP2013112562A
Publication Date:
September 25, 2014
Filing Date:
May 29, 2013
Export Citation:
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Assignee:
HITACHI HIGH TECH CORP
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
JP2008527634A2008-07-24
JP2002043286A2002-02-08
JP2005500684A2005-01-06
JP2006066905A2006-03-09
JP2008187181A2008-08-14
JP2008244146A2008-10-09
JP2002343768A2002-11-29
JPH11185998A1999-07-09
JP2008527634A2008-07-24
JP2002043286A2002-02-08
JP2005500684A2005-01-06
JP2006066905A2006-03-09
JP2008187181A2008-08-14
JP2008244146A2008-10-09
JP2010520398A2010-06-10
Attorney, Agent or Firm:
Polaire Intellectual Property Corporation



 
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