To perform black detect correction which can be adapted to an EUVL mask without a buffer layer and has low damage and high throughput.

A black defect is recognized by electronic beams 2 with little damage. In an ion beam defect correction device, a thickness by which damage does not reach a base is left at the outer edge and the inner part of the defect, the black defect 23 is removed by ion beams 12 while assist gas is made to flow from a gas gun 10. The left edge and the inner part 22 of the defect are removed by the electronic beams 2 while etching gas is made to flow from the gas gun 10. A detector 18 detects characteristic X-rays, Auger electrons, or secondary electrons 17 which are emitted from a work region in the middle of work by the electronic beams 2. Black defect correction is performed without damaging a Mo/Si multilayer film 21 even if the buffer layer does not exist by detecting the end point of removal work from a change in the strength of a detected signal.