METHOD OF CORRECTING PROXIMITY EFFECT IN ELECTRONIC BEAM LITHOGRAPHIC DEVICE

Japanese Patent JPS6112068

A

A method for electron beam lithography writing of a micro-miniature pattern P(x, y) in a resist-coated workpiece, the method comprising the steps of calculating, at a plurality of grid points on the workpiece, the electron dosage required to produce uniform exposure of the pattern P in accordance with the expression $where\; S\; represents\; the\; backscattered\; exposure\; distribution\; produced\; by\; an\; incident\; electron\; beam,\; and\; A,\; B\; and\; beta\; b\; are\; constants.\; The\; pattern\; is\; then\; written\; on\; the\; workpiece\; with\; the\; electron\; beam\; while\; varying\; the\; applied\; electron\; dosage\; in\; accordance\; with\; the\; calculated\; values\; of\; required\; electron\; dosage.\; In\; a\; preferred\; embodiment,\; the\; electron\; dosage\; applied\; by\; the\; electron\; beam\; lithography\; system\; is\; varied\; between\; a\; number\; of\; discrete\; levels.\; The\; features\; of\; the\; pattern\; P\; are\; partitioned\; into\; subfeatures\; in\; accordance\; with\; the\; calculated\; values\; of\; required\; electron\; dosage.\; The\; subfeatures\; are\; then\; assigned\; to\; one\; of\; the\; discrete\; dosage\; levels\; of\; the\; system.$

JIYON EMU PABUKOBITSUKU

JP13009485A

January 20, 1986

June 17, 1985

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VARIAN ASSOCIATES

H01L21/027; H01J37/317; (IPC1-7): H01L27/14

JPS5666634A	1981-06-05
JPS565025Y2	1981-02-03

Sumio Takeuchi

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