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Title:
METHOD FOR CRYSTALLIZING ZINC OXIDE AND CRYSTAL FILM FORMATION DEVICE
Document Type and Number:
Japanese Patent JP2008081344
Kind Code:
A
Abstract:

To reduce the temperature in crystallizing treatment for a zinc oxide film, and to reduce treatment time.

A zinc oxide film (f) is deposited on a base material W by a spin coat process, plasma CVD (Chemical Vapor Deposition) or the like. While the base material W is heated to about 350C by a temperature control means 40, so as to perform temperature control, a treatment gas for crystallization, e.g., composed of a gaseous mixture of oxygen and nitrogen is converted into plasma by a plasma irradiation means 10, and the base material W is irradiated with the plasma.


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Inventors:
KUNUGI SHUNSUKE
ANZAI JUNICHIRO
UEHARA TAKESHI
NAKANO YOSHINORI
Application Number:
JP2006261902A
Publication Date:
April 10, 2008
Filing Date:
September 27, 2006
Export Citation:
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Assignee:
SEKISUI CHEMICAL CO LTD
International Classes:
C04B41/80; C01G9/02; C04B35/453; C30B29/16
Domestic Patent References:
JP2004231495A2004-08-19
Foreign References:
WO2003031673A12003-04-17
Attorney, Agent or Firm:
Noboru Watanabe
Harada Sanjugi



 
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