PURPOSE: To enable the wafer with high preciseness to be produced effectively by a method in which while the feeding speed of a columnar material to a cutting blade is controlled so as to coincide with the speed curve which has been preliminarily set, the cutting of the wafer is carried out.

CONSTITUTION: A speed curve is so controlled that the deviation of the contact length of an inner peripheral blade 20 to an ingot 18 is compensated in order to keep its cutting resistance at a constant value. That is to say, the speed curve is continuously so changed that when the contact length of the inner peripheral blade 20 is increasing, the feeding speed of the ingot 18 decreases, and when the contact length is decreasing, the feeding speed increases. While the feeding speed of the ingot 18 is changed along this speed curve, the ingot is cut, whereby the displacement and cutting resistance of the inner peripheral blade 20 may be kept at almost constant value as shown. Consequently, the number of the dressing of the inner peripheral blade 20 may be reduced, and the life of the blade 20 is elongated. Further, if the feeding speed is raised in the range of allowable cutting resistance, the time necessary for cutting a wafer is shortened, and its production effect may be improved.