Title:
METHOD FOR CUTTING SEMICONDUCTOR WAFER BY USING LASER SCRIBING PROCESS
Document Type and Number:
Japanese Patent JP3739761
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for cutting a semiconductor wafer.
SOLUTION: In the method for cutting the wafer having a top face, on which a semiconductor layer is formed, in a chip unit in a specified size, the method containing a stage (Fig. (B)) when the underside of the wafer (11) is lapped so that the wafer has a specified thickness, the stage (Fig. (C)) when the underside of the wafer is irradiated with laser beams in a chip size and a scribing line (15) is formed, the stage (Fig. (D)) when the underside of the wafer (11), to which the scribing line is formed, is polished and the stage (Fig. (E)) when the wafer is separated in the chip unit (20) along the line (15) is provided. According to the method, the semiconductor wafer having a high hardness such as a GaN semiconductor wafer can be cut by combining a lapping process, in which a wafer thickness is reduced, and a scribing process by laser beams.
Inventors:
Youn administration
Kure Kunigen
Gold pillar
Sentence
Lee Kuni
Kure Kunigen
Gold pillar
Sentence
Lee Kuni
Application Number:
JP2003171695A
Publication Date:
January 25, 2006
Filing Date:
June 17, 2003
Export Citation:
Assignee:
Samsung Electric Co., Ltd.
International Classes:
H01L21/301; H01L21/304; H01L21/78; H01L33/32; (IPC1-7): H01L21/301; H01L33/00
Domestic Patent References:
| JP11163403A | ||||
| JP11191636A | ||||
| JP11354841A | ||||
| JP2001135595A | ||||
| JP10178239A | ||||
| JP60108193A |
Attorney, Agent or Firm:
Hidekazu Miyoshi