To obtain a single crystal wafer which has a cutting face corresponding to desired crystal orientation with accuracy and has high flatness of a surface.

There is provided a method for cutting a plurality of single crystal bodies 20a, 20b arranged along a traveling direction of a wire saw relative to the wire saw extended and traveling between a plurality of rollers 12 by relatively pressing them. Array states of constituent elements in a direction along center axes Oa, Ob of the single crystal bodies 20a, 20b from one side ends of the single crystal bodies 20a, 20b to another side ends of the single crystal bodies 20a, 20b, and array states of constituent elements in a direction from the another side ends to the one side ends, are mutually different. In this method for cutting the plurality of single crystal bodies 20a, 20b, the single crystal bodies 20a, 20b: are arranged in a line parallel to the travelling direction of the wire saw in such a way that the center axes Oa, Ob cross the travelling direction of the wire saw, and a direction of the single crystal body 20a is opposite to a direction of the adjacent single crystal body 20b with respect to the array states of the constituent elements in the direction from the one side end to the another side end; and are cut by being relatively pressed to the travelling wire saw.