半導体基板の表面に金属層を堆積する方法 - AIR PRODUCTS AND CHEMICALS INCORPORATED

Title:

半導体基板の表面に金属層を堆積する方法

Document Type and Number:

Japanese Patent JP4113099

Kind Code:

B2

Abstract:

In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.

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Inventors:

John Anthony Thomas Norman
David Allen Roberts
Melanie Ambose

Application Number:

JP2003375645A

Publication Date:

July 02, 2008

Filing Date:

November 05, 2003

Export Citation:

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Assignee:

AIR PRODUCTS AND CHEMICALS INCORPORATED

International Classes:

C23C16/14; C23C10/60; C23C16/08; C23C16/18; C23C16/30; C23C16/56; C23C26/00; H01L21/285; H01L21/768

Domestic Patent References:

JP2003531474A
JP2003109914A
JP2005505690A
JP2002069088A

Foreign References:

WO2001066832A1
US5306666

Attorney, Agent or Firm:

Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Masaya Nishiyama

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