Title:
圧電性ＡｌＮ含有層の堆積方法、並びにＡｌＮ含有圧電体層
Document Type and Number:
Japanese Patent JP6407273
Kind Code:
B2
Abstract:
A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1≤X≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).
Inventors:
Hagen Birch
Daniel Grace
Peter Flacher
Stephan Bart
Daniel Grace
Peter Flacher
Stephan Bart
Application Number:
JP2016526481A
Publication Date:
October 17, 2018
Filing Date:
June 24, 2014
Export Citation:
Assignee:
Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
Technische Universitaet Dresden
Technische Universitaet Dresden
International Classes:
C23C14/34; C23C14/06; H01L41/187; H01L41/316
Domestic Patent References:
| JP2012084526A | ||||
| JP2001279438A |
Other References:
Agne ZUKAUSKAITE et al.,Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films,JOURNAL OF APPLIED PHYSICS,米国,AMERICAN INSTITUTE OF PHYSICS,2012年 5月 1日,VOL:111 NR:9,pp. 93527/1 - 93527/7,URL,http://dx.doi.org/10.1063/1.4714220
Attorney, Agent or Firm:
Einzel Felix-Reinhard
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima
Junichi Maekawa
Hiroyasu Ninomiya
Ueshima