To provide a method for depositing a tungsten film in which resistivity is reduced, the concentration of fluorine in the boundary part of a substrate with a barrier layer is reduced, and adhesion with the barrier layer can be improved.

The method for depositing a tungsten film on the surface of a work M in a treatment vessel 14 capable of evacuation comprises: a stage where a silicon-containing gas is fed to the work; and a stage where, after the above stage, a tungsten-containing gas feeding step of feeding a tungsten-containing gas and a hydrogen compound gas feeding step of feeding a hydrogen compound gas which does not contain silicon are alternately repeated in such a manner that a purge step of feeding an inert gas into the treatment vessel and/or an evacuation step of evacuating the treatment vessel are interposed between both the steps.