Title:
METHOD FOR DETECTING CONCENTRATION OF IMPURITY IN CRYSTAL, PRODUCTION OF SINGLE CRYSTAL AND DEVICE FOR PULLING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH10291892
Kind Code:
A
Abstract:
To calculate the amt. of an impurity in a crystal.
A temp. sensor 42 is fitted to a furnace 11, the temp. of a part above a melt 24 housed in a crucible 12 is measured and the evaporative state of oxygen evaporated from the free surface 44 of the melt 24 is detected. The concn. of oxygen in the melt 24 is calculated from relation with the amt. of oxygen dissolved in the crucible 12 and the amt. of oxygen incorporated into a silicon single crystal 40 pulled from the melt 24 can be known.
Inventors:
MAEDA SUSUMU
ABE HIROSHIGE
TERAJIMA KAZUTAKA
NAKANISHI HIDEO
ABE HIROSHIGE
TERAJIMA KAZUTAKA
NAKANISHI HIDEO
Application Number:
JP11883597A
Publication Date:
November 04, 1998
Filing Date:
April 22, 1997
Export Citation:
Assignee:
KOMATSU DENSHI KINZOKU KK
MITSUBISHI MATERIAL SILICON
KAGAKU GIJUTSU SHINKO JIGYODAN
TOSHIBA CERAMICS CO
MITSUBISHI MATERIAL SILICON
KAGAKU GIJUTSU SHINKO JIGYODAN
TOSHIBA CERAMICS CO
International Classes:
C30B15/00; C30B15/20; C30B29/06; H01L21/208; (IPC1-7): C30B15/20; C30B29/06; H01L21/208
Attorney, Agent or Firm:
Yuichi Murakami (1 outside)
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