Title:
半導体インゴットのスライシング加工条件決定方法および半導体ウェーハの製造方法
Document Type and Number:
Japanese Patent JP7427921
Kind Code:
B2
Abstract:
To provide a new method for determining a slicing processing condition of a semiconductor ingot.SOLUTION: A determining method of a processing condition of slicing processing in which a semiconductor ingot is cut with a wire saw includes determining a wire velocity profile that changes the wire velocity of the wire saw during slicing. The determination of the wire velocity profile includes performing model calculation to predict the temperature of the semiconductor ingot during slicing and determining the wire velocity profile in which the temperature change of the semiconductor ingot during slicing is suppressed.SELECTED DRAWING: Figure 5
Inventors:
Takayuki Kihara
Masaki Fukuda
Makoto Funayama
Takashi Nakayama
Yuki Nakajima
Yuho Ikeda
Masaki Fukuda
Makoto Funayama
Takashi Nakayama
Yuki Nakajima
Yuho Ikeda
Application Number:
JP2019204357A
Publication Date:
February 06, 2024
Filing Date:
November 12, 2019
Export Citation:
Assignee:
Sumco inc.
International Classes:
B24B27/06; H01L21/304; B24B55/02; B28D5/04; B28D7/00; B28D7/02
Domestic Patent References:
| JP2014180745A | ||||
| JP11156694A | ||||
| JP2002036094A | ||||
| JP2008073816A | ||||
| JP2008078473A |
Foreign References:
| WO2000043162A1 | ||||
| WO2008108051A1 | ||||
| WO2008149490A1 |
Attorney, Agent or Firm:
Sykes Patent Attorney Corporation
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