To provide a method and a device for reducing the equipment cost and running cost of plasma vapor deposition and etching equipment and removing the dust in a plasma with certainty.

The inside of a vacuum vessel 1, where a wafer 5 is set, is irradiated with a high frequency electromagnetic wave from outside to produce a plasma and apply plasma vapor deposition and etching to the wafer surface. In this plasma vapor deposition and etching equipment, a magnetic field 10 parallel to the wafer, generated by a magnetic field generating means 8, is applied to the plasma. This plasma is shifted and allowed to collide against a dust adsorption plate 7 orthogonal to the magnetic field 10. High temp. heating can be applied to the dust adsorption plate 7 by the plasma collision, by which the dust can be removed by adsorption.