METHOD AND DEVICE FOR FORMING INSULATING FILM

Title:

METHOD AND DEVICE FOR FORMING INSULATING FILM

Document Type and Number:

Japanese Patent JP2004158794

Kind Code:

A

Abstract:

To provide a method and device by which an insulating film is formed in which pores can be formed uniformly.

The molecular active species of 1, 3, 5-trimethyl-1, 3, 5-trivinyl siloxane (V3D3) and isopropyl alcohol (IPA) are generated by supplying the compounds to a chamber 12 and exciting the compounds with a plasma. Then, for example, a thin insulating film containing IPA molecules and having a thickness of 50 nm is formed by causing the active species to react to each other near the surface of a substrate. In addition, pores are formed uniformly in the thickness direction in the thin film by selectively eliminating the IPA molecules contained in the thin film through a plasma treatment performed by using an ammonia gas. By repeating the film forming step and pore forming step a plurality of times, the insulating film having a prescribed thickness and containing uniformly formed pores can be obtained.

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Inventors:

KASHIWAGI YUSAKU
KAGAWA KEIEI
KAWAMURA GOHEI
TEI MOTOICHI

Application Number:

JP2002325379A

Publication Date:

June 03, 2004

Filing Date:

November 08, 2002

Export Citation:

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Assignee:

TOKYO ELECTRON LTD

International Classes:

C23C16/40; C23C16/44; C23C16/455; C23C16/56; F27B17/00; F27D1/16; H01L21/00; H01L21/316; (IPC1-7): H01L21/316; C23C16/40; C23C16/44

Domestic Patent References:

JP2000216153A	2000-08-04
JPH0729897A	1995-01-31
JP2002134494A	2002-05-10
JPH11176829A	1999-07-02

Attorney, Agent or Firm:

Kimura Mitsuru

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