Title:
METHOD AND DEVICE FOR HEATING OR COOLING SEMICON DUCTOR WAFER IN SEMICON DUCTOR WAFER PROCESSOR
Document Type and Number:
Japanese Patent JPH02308529
Kind Code:
A
Abstract:
PURPOSE: To provide a good heat trnasmission at the same depressing degree with the pressure used for etching or manufacturing method by using a cooling or heating gas which plays a role as a processing gas component when cooling a semiconductor wafer in a plasma etching device. CONSTITUTION: At cooling a semiconductor wafer in a plasma etching device, one or more kinds of component of a processing gas used for plasma etching process is used as a gas conductive heat transmission gas. With at least a part of a component of one kind or more of the precutting gas made contacted to the surface of the semiconductor wafer, a heat is transferred from the wafer into the device, then to a heat sink positioned adjoining the wafer for heat transmission. With the same depressing degree as the pressure used with a plasma etching method or other semiconductor manufacturing method, good heat transmission is obtained.
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Inventors:
CHIYUU UIN CHIYUI
RICHIYAADO EICHI KUROKETSUTO
RICHIYAADO EICHI KUROKETSUTO
Application Number:
JP10994190A
Publication Date:
December 21, 1990
Filing Date:
April 25, 1990
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
H01L21/302; H01J37/32; H01L21/00; H01L21/3065; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS6083323A | 1985-05-11 | |||
| JPS5832410A | 1983-02-25 |
Attorney, Agent or Firm:
Minoru Nakamura (7 outside)