Title:
METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR, SEMICONDUCTOR WAFER AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3720083
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the evaporating efficiency of liquid material, to prevent the formation of an unnecessary film in a device and to improve the productivity of a semiconductor device.
SOLUTION: The liquid material 27 in a liquid material tank 25 is pressure- fed into a liquid material tank 25 by liquid material delivering gas, the liquid material 27 is fed to an evaporation nozzle 21, and carrier gas (inert gas) and gaseous material are fed to a vaporizing nozzle 21 from a gas feeding part 8. The liquid material 27 sent from the gas nozzle 21 comes into collision with the carrier gas and the gaseous material, it is brought into the state of particulates, vaporized efficiently, fed to the surface of the wafer 4 on the susceptor 3 which is heated by a heater 31, and a thin film is formed.
Inventors:
Yoshitsugu Tsutsumi
Yoshio Okamoto
Kazunori Watanabe
Osamu Kasahara
Yoshio Okamoto
Kazunori Watanabe
Osamu Kasahara
Application Number:
JP18591795A
Publication Date:
November 24, 2005
Filing Date:
July 21, 1995
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L21/285; H01L21/205; H01L21/31; H01L21/316; (IPC1-7): H01L21/31; H01L21/316
Domestic Patent References:
| JP7126851A | ||||
| JP7094426A | ||||
| JP5082489A |
Attorney, Agent or Firm:
Kasuga Toshiaki