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Title:
METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3734447
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To evenly and efficiently reduce a metal oxide generated on a metal making an electrode and a wiring of a semiconductor device.
SOLUTION: An object 2 to be processed on which a copper oxide is generated is placed in a processing chamber 3 to heat up to a specified temperature with a heater 8. Then, after carboxylic acid stored in a tank 15 is vaporized with a vaporizer 18, the vaporized carboxylic acid and a carrier gas are introduced into the processing chamber 3 through a processing gas supplying piping 16, to reduce the copper oxide of the object 2 to a metallic copper. Thereby a metal oxide is evenly reduced without roughenning a surface of the electrode and the wiring. Further, carbon dioxide and water generated at this time are both in a state of gas, so that impurities are prevented from remaining on a surface of the copper.


Inventors:
Akbar, Ade Asneil
Oba, Takayuki
Application Number:
JP2002000009785
Publication Date:
January 11, 2006
Filing Date:
January 18, 2002
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
H01L21/302; H01L21/768; B08B7/00; H01L21/00; H01L21/02; H01L21/3065; H01L21/321; H01L21/3213; H01L21/306; (IPC1-7): H01L21/768; H01L21/3065
Domestic Patent References:
JP11312734A
Attorney, Agent or Firm:
服部 毅巖