To perform treatment, such as film forming and etching on a wafer using ECR(electron cyclotron resonance) plasma with a high in-plane uniformity.
Density of electrons at an ECR point, separated from and opposite a substrate to be treated, is set to equal to ore mor than 0.46 nc and less than one nc which is a cut-off density on the side of the upper limit of X-wave. In this way, an electron density distribution is formed with large crests at both ends of the region and with peak values in the center of the region which are lower than those at the ends. In this case, the outer perimeter of the magnetic field between the ECR point and the substrate cuts once the inner walls of the vacuum chamber and a space of 1/4 or more of the wavelength of the X-wave is formed between the outer perimeter and the inner walls towards downstream.
UEDA YOKO
ISHII NOBUO
KAWAKAMI SATOSHI
AMANO HIDEAKI
| JPS55106183A | 1980-08-14 |
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