To decrease readout voltage to be applied to a readout electrode and to suppress time-lapse deterioration in charge transfer efficiency.
A method of driving a CCD type solid-state imaging device equipped with a plurality of successive transfer electrodes constituting a charge transfer path is characterized in that concurrently with the application of the readout voltage to a transfer electrode V1 serving also as the readout electrode among the transfer electrodes, a voltage having the opposite polarity from the readout voltage is applied to a transfer electrode V3 away from the readout electrode V1. By the method, variation in GND potential of the solid-state imaging device due to the readout voltage application is suppressed, and consequently the readout voltage can be decreased. Further, the opposite-polarity voltage is applied to the electrode V3 distant from the electrode V1, so that electric field intensity between the electrodes V1 and V3 becomes weak and the time-lapse deterioration in the charge transfer efficiency is suppressed.
| JPH1197668 | CCD DELAYING DEVICE |
| JP4016192 | Solid-state image sensor and its manufacturing method |
UIE SHINJI
| JP2001016510A | 2001-01-19 |
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Kiyozumi Yazawa
Next Patent: MOVEMENT DETECTION METHOD AND DEVICE THEREFOR