METHOD FOR ENABLING OPERATION UNDER RADIATION BY CONTROLLING AT LEAST ONE IGBT TYPE TRANSISTOR

Title:

METHOD FOR ENABLING OPERATION UNDER RADIATION BY CONTROLLING AT LEAST ONE IGBT TYPE TRANSISTOR

Document Type and Number:

Japanese Patent JPH1155098

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a control process for producing a power supply circuit based on an IGBT type transistor applicable to stored doses of more than 10 M red. SOLUTION: In this method, at least one 1st IGBT type transistor 30 is controlled so as to enable operation under radiation. In this case, the value of the threshold gate/emitter voltage at the 1st IGBT type transistor 30 under radiations is measured, and a voltage to be impressed between the gate and emitter of at least one 2nd IGBT type transistor is changed so as to follow up the set value in spite of drift caused by the radiation in the threshold voltage of at least one 2nd IGBT type transistor.

Inventors:

MARCEAU MICHEL
COGAT GUILLAUME

Application Number:

JP16399398A

Publication Date:

February 26, 1999

Filing Date:

June 11, 1998

Export Citation:

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Assignee:

COMMISSARIAT ENERGIE ATOMIQUE
COGEMA

International Classes:

H02H5/00; H03K17/56; H03K17/14; (IPC1-7): H03K17/14; H03K17/56

Attorney, Agent or Firm:

Masatake Shiga (9 outside)

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