METHOD AND EQUIPMENT FOR DEPOSITING FILM - SEMICONDUCTOR ENERGY LAB

Title:

METHOD AND EQUIPMENT FOR DEPOSITING FILM

Document Type and Number:

Japanese Patent JPH07211657

Kind Code:

A

Abstract:

PURPOSE: To deposit a high quality film at high rate by covering a discharge space with a purge gas under pressure within a specified range, applying a bias voltage for causing the sputtering between the discharge space and a basic body, and then applying a magnetic field so that various particles in a plasma are attracted in the direction of the basic body.

CONSTITUTION: A purge gas nozzle 3 has coaxial double tube structure. Purge gas is introduced into the space between the inner and outer tubes and ejected through a blow-out port directing to blow out the purge gas in the outer peripheral direction. Consequently, discharge takes place between the central conductor 1 and the tubular insulator 2 to produce radicals. The equipment is housed in a simple vacuum vessel evacuated to set the pressure in the discharge space at 5-150Torr.

Inventors:

HAYASHI SHIGENORI
TERAMOTO SATOSHI
ITO KENJI
YAMAZAKI SHUNPEI

Application Number:

JP1597094A

Publication Date:

August 11, 1995

Filing Date:

January 14, 1994

Export Citation:

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Assignee:

SEMICONDUCTOR ENERGY LAB

International Classes:

H05H1/46; B01J19/08; C23C16/26; C23C16/27; C23C16/50; H01L21/205; (IPC1-7): H01L21/205; B01J19/08; C23C16/26; C23C16/50

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