Title:
METHOD OF ETCHING POLYSILICON
Document Type and Number:
Japanese Patent JPH06168916
Kind Code:
A
Abstract:
PURPOSE: To provide the etching method capable of etching away polysilicon in an arbitrary shape e.g. in order to perform the normal taper etching step, capable of normal taper etching polysilicon in high selection ratio from a substrate material.
CONSTITUTION: Within the etching method of polysilicon 1 by plasma etching step, when the gas system 3 containing the bromine base gas or chlorine group gas with oxygen added thereto is used for taper etching step, the taper angle of polysilicon etched away by controlling the oxygen flow rate is further controlled to perform the taper etching step.
Inventors:
TOUMIYA YOSHITETSU
Application Number:
JP34327892A
Publication Date:
June 14, 1994
Filing Date:
November 30, 1992
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Toru Takatsuki