Title:
METHOD OF ETCHING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2005064035
Kind Code:
A
Abstract:
To provide a method of etching semiconductor device by which the side wall of the step of a semiconductor device constituted of the principal surface and side wall of the device is etched.
The side wall of the step of the semiconductor device constituted of the principal surface and side wall of the device is etched, by controlling an impressing direction of a magnetic field or impressing directions of a magnetic field and an electric field upon etching species and by utilizing the reaction between the etching species and side wall.
Inventors:
MASUOKA FUJIO
HORII SHINJI
TANIGAMI TAKUJI
YOKOYAMA TAKASHI
HORII SHINJI
TANIGAMI TAKUJI
YOKOYAMA TAKASHI
Application Number:
JP2003207352A
Publication Date:
March 10, 2005
Filing Date:
August 12, 2003
Export Citation:
Assignee:
MASUOKA FUJIO
SHARP KK
SHARP KK
International Classes:
H01J37/32; H01L21/302; H01L21/3065; H01L21/311; H01L21/3213; H01L21/425; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
Shintaro Nogawa
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