Title:
方法およびエッチングシステム
Document Type and Number:
Japanese Patent JP7269296
Kind Code:
B2
Abstract:
Monitoring a geometric parameter value for one or more features produced on a substrate during an etch process may involve: (a) measuring optical signals produced by optical energy interacting with features being etched on the substrate; (b) providing a subset of the measured optical signals, wherein the subset is defined by a range where optical signals were determined to correlate with target geometric parameter values for features; (c) applying the subset of optical signals to a model configured to predict the target geometric parameter values from the measured optical signals; (d) determining, from the model, a current value of the target geometric parameter of the features being etched; (e) comparing the current value of the target geometric parameter of the features being etched to an etch process endpoint value for the target geometric parameter; and (f) repeating (a)-(e) until the comparing in (e) indicates that the current value of the target geometric parameter of the features being etched has reached the endpoint value.
Inventors:
Andrew Dee Bailey the Third
Mehmet Deluya Tetiker
Duncan W. Mills
Mehmet Deluya Tetiker
Duncan W. Mills
Application Number:
JP2021152896A
Publication Date:
May 08, 2023
Filing Date:
September 21, 2021
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01L21/3065
Domestic Patent References:
JP2005536074A | ||||
JP2008091673A |
Attorney, Agent or Firm:
Patent Attorney Corporation Meisei International Patent Office
Previous Patent: Composition for secondary battery electrode
Next Patent: JOINT FOR COMPOSITE SEGMENT
Next Patent: JOINT FOR COMPOSITE SEGMENT