To provide a method for evaluating photomask defect transfer characteristics with higher accuracy by which an error component generated by exposure in a plurality of times can be eliminated in the evaluation of pattern defect transfer characteristics of a photomask to be used for multiple exposure techniques, by use of a lithography simulation microscopy.
The method for evaluating photomask defect transfer characteristics of a photomask aims evaluation of a photomask to be used for multiple exposure techniques of subjecting the same pattern of the same photomask to exposure a plurality of times under a plurality of different irradiation conditions so as to form a single transfer pattern on a wafer. Upon evaluating the defect transfer characteristics of the photomask by using a lithography simulation microscope, the photomask pattern is subjected to exposure only once under one compounded irradiation conditions by adding the a plurality of different irradiation conditions to obtain a transferred image of the pattern, and the mask pattern is determined as acceptable or not by the intensity of light and/or values of CD (critical dimension) in a defective portion of the transferred image.
NAGAI TAKAHARU
INAZUKI YUICHI
TOYAMA NOBUTO
MORIKAWA YASUTAKA
Keiko Fukamachi
Hideo Ito
Hiromi Fujimasu
Naoki Goto
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