Title:
METHOD FOR EVALUATING SILICON CRYSTAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003152043
Kind Code:
A
Abstract:
To provide a method for evaluating a silicon crystal by accurately measuring an impurity nitrogen concentration in the silicon crystal.
The method for evaluating the silicon crystal comprises the step of heating the crystal until a defect reaction in the crystal arrives at a metal-thermal equilibrium state. The method further comprises the steps of measuring the infrared absorption spectrum of the silicon crystal, and obtaining the strength of the absorption peak corresponding to the defect caused by the impurity nitrogen from the absorption spectrum.
Inventors:
TANAHASHI KATSUTO
KANEDA HIROSHI
KANEDA HIROSHI
Application Number:
JP2002074870A
Publication Date:
May 23, 2003
Filing Date:
March 18, 2002
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G01N25/72; G01N21/35; G01N21/3563; H01L21/66; (IPC1-7): H01L21/66; G01N21/35; G01N25/72
Attorney, Agent or Firm:
Keishiro Takahashi (1 person outside)