To satisfy the need of reducing the content of the unused catalytic metal element after crystallization remaining in a crystallized semiconductor film fabricated by using a catalytic metal element.

A laser beam is applied to a crystalline semiconductor film crystallized by a heat treatment in the presence of a catalytic metal element, and this results in the segregation of the catalytic metal element on the surface of the crystalline semiconductor film. The surface of the crystalline semiconductor film whereon the catalytic metal element is segregated is removed by etching, and this reduces the total content of the catalytic metal element in the film for lowering the catalytic metal element concentration level in the film.