Title:
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002373886
Kind Code:
A
Abstract:
To provide a technology for ensuring safety of a gas produced through reaction in a semiconductor production system.
Gas leak detectors 11a and 11b for detecting leakage of a gas B produced through reaction are provided in the exhaust system of a dry etching system 1. When a detected leakage of the gas B produced through reaction exceeds a management level, operation of the dry etching system 1 and a gas supply system 2 is stopped by a signal (stop signal) outputted from a gas leakage indicator 10.
Inventors:
ENOMOTO HIROYUKI
ANDO TOSHIO
TAKAHASHI NUSHITO
ANDO TOSHIO
TAKAHASHI NUSHITO
Application Number:
JP2001181070A
Publication Date:
December 26, 2002
Filing Date:
June 15, 2001
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; H01L21/205; H01L21/3065; (IPC1-7): H01L21/3065; H01L21/205
Attorney, Agent or Firm:
Yamato Tsutsui
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