To protect a gate oxide film against breakdown due to charge up damage by reducing inflow of plasma electrons, generated at the time of depositing a thin film by sputtering, to a semiconductor substrate.

In a process for making contact holes 23 in an insulation film 22 and depositing a barrier conductor film 24 on the surface of the insulation film 22 including the inside of the contact holes 23 by sputtering, means for reducing inflow of plasma electrons to a semiconductor substrate 1 is employed for depositing the barrier conductor film 24. As the means for reducing inflow of plasma electrons to the semiconductor substrate 1, a collimation sputtering system or a long throw sputtering system is employed.