Title:
METHOD FOR FABRICATING THIN POLYSILICON FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY EMPLOYING IT IN SWITCHING ELEMENT
Document Type and Number:
Japanese Patent JP2002353135
Kind Code:
A
Abstract:
To provide a method for fabricating a thin polysilicon film transistor having no variation in the TFT characteristics, and a liquid crystal display employing it in switching element.
The method for fabricating a thin polysilicon film transistor comprises a step for cleaning an amorphous polysilicon film with hydrofluoric acid water immediately after it is formed on an insulating substrate through an undercoat oxide film and then cleaning it with ozone water to form an ozone oxide film on the surface of the amorphous silicon film. Consequently, impurity contamination is prevented and a polysilicon film can be formed while suppressing surface irregularities.
Inventors:
NAKASAKI YOSHIAKI
FURUTA MAMORU
NAKAMURA AKIRA
YAMAMOTO TAKASHI
FURUTA MAMORU
NAKAMURA AKIRA
YAMAMOTO TAKASHI
Application Number:
JP2001154445A
Publication Date:
December 06, 2002
Filing Date:
May 23, 2001
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G02F1/1368; H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; G02F1/1368; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (5 outside)