Title:
METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5230171
Kind Code:
A
Abstract:
PURPOSE:To simplify the fabrication processes and to make polishing processes as scarce as possible in the method for fabrication of semiconductor device by the insulator-separation mode.
Inventors:
INABA TOORU
Application Number:
JP10591475A
Publication Date:
March 07, 1977
Filing Date:
September 03, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/762; H01L21/02; H01L21/302; H01L21/306; H01L27/02; H01L27/12; (IPC1-7): H01L21/302; H01L27/02
Domestic Patent References:
| JPS4838689A | 1973-06-07 |